1/5 stps10150ct/cg ? april 2001 - ed: 4b high voltage power schottky rectifier i f(av) 2x5a v rrm 150 v tj 175c v f (max) 0.75 v main product characteristics n high junction temperature capability n good trade off between leakage cur- rent and forward voltage drop n low leakage current features and benefits dual center tap schottky rectifier designed for high frequency switched mode power sup- plies. description to-220ab stps10150ct k a2 a1 symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) rms forward current 10 a i f(av) average forward current d = 0.5 to-220ab d 2 pak tc = 155c per diode per device 5 10 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 120 a t stg storage temperature range - 65 to + 175 c tj maximum operating junction temperature 175 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) d 2 pak STPS10150CG k a2 a1 a1 a2 k
stps10150ct/cg 2/5 symbol parameter value unit r th (j-c) junction to case to-220ab / d 2 pak per diode 4 c/w to-220ab / d 2 pak total 2.4 r th (c) to-220ab / d 2 pak coupling 0.7 thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 2.0 m a tj = 125c 0.40 2.0 ma v f ** forward voltage drop tj = 25 ci f = 5 a 0.92 v tj = 125c i f = 5 a 0.69 0.75 tj=25 ci f =10a 1 tj = 125c i f = 10 a 0.79 0.85 pulse test : * t p=5ms, d <2% ** tp = 380 m s, d <2% to evaluate the conduction losses use the following equation: p = 0.65 i f(av) + 0.02 i f 2 (rms) static electrical characteristics (per diode) when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 if(av) (a) pf(av)(w) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 tamb(c) if(av)(a) rth(j-a)=rth(j-c) rth(j-a)=15c/w t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode).
stps10150ct/cg 3/5 1e-3 1e-2 1e-1 1e+0 0 10 20 30 40 50 60 70 80 t(s) im(a) tc=50c tc=75c tc=125c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 25 50 75 100 125 150 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 vr(v) ir(a) tj=75c tj=25c tj=125c tj=150c tj=175c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode) 1 2 5 10 20 50 100 200 10 20 50 100 200 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=125c tj=25c tj=125c typical values fig. 7: forward voltage drop versus forward current (maximum values, per diode). 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 s(cm2) rth(j-a) (c/w) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board, copper thickness: 35m) (STPS10150CG only).
stps10150ct/cg 4/5 package mechanical data to-220ab a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151
stps10150ct/cg 5/5 package mechanical data d 2 pak a c2 d r 2.0 min. flat zone a2 v2 c a1 g l l3 l2 b b2 e ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.30 4.60 0.169 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.25 1.40 0.049 0.055 c 0.45 0.60 0.017 0.024 c2 1.21 1.36 0.047 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.28 0.393 0.405 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 r 0.40 0.016 v2 0 8 0 8 8.90 3.70 1.30 5.08 16.90 10.30 foot print dimensions (in millimeters) information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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